Silicon Carbide(SIC)physics properties in below:
Melting Point(Decomposition temperature)
|
2973K
|
Heating Power
|
30.343KJ/mol
|
Compression Coefficient
|
0.21*10-6
|
Density
|
3.216g/cm3
|
Thermal Conductance
|
0.065-0.098J/(cml.s.k)
|
Crystal Structure
|
Cubic/3C
|
Hardness
|
9.5mohs
|
Linear Expansion Coefficient (373K)
|
6.58*10-6
|
Linear Expansion Coefficient (1173K)
|
2.98*10-6
|
Heat of Formation
|
111.8KJ/mol
|
Molar Heat(276K)
|
24.7J/(mol.K)
|
Evaporation activation energy
|
245KJ/mol
|
Silicon carbide particles can be bonded together by sintering to form very hard ceramics that are widely used in applications requiring high endurance, such as car brakes, car clutches and ceramic plates in bulletproof vests.
Beta SiC silicon carbide is one of the most hard high-performance materials,second only to diamond. its high hardness and density can be ideally applicable to the high wear and sliding parts, also applicable to all kinds of abrasive effect especially ultra-precision grinding.