Designed to provide more accurate process control and more targeted and efficient power delivery, AE 1306370A 196 0702 Board delivers the precise bias plasma performance for high-aspect-ratio (HAR) structures at high speeds. AE 1306370A 196 0702 Board features customizable and direct ion energy selection. Unlike traditional sinusoidal RF power sources, AE 1306370A 196 0702 Board enables the production of near mono-energetic ion energy distributions (IEDs) that deliver power only where the plasma needs it. This, in turn, delivers maximum efficiency with the least wasted energy.
AE 1306370A 196 0702 Board breaks a trend that has been pushing RF power requirements up to 100 kW per plasma chamber and as much as 1MW per etcher for HAR applications. UsingAE 1306370A 196 0702 Board results in half or even a third of the power consumption. Employing AE 1306370A 196 0702 Board in a NAND fab with 180 etchers has the potential to reduce overall power consumption by as much as 120 MW.
