LaSrAlO4 single crystal substrate

Major capability parameter
Crystal structure	M4
Growth method	Czochralski method
Unit cell constant	a=3.756Å c=12.63 Å
Melt point（℃）	1650
Density	5.92（g/cm3）
Hardness	6-6.5（mohs）
Dielectric constants	ε=16.8
Size	10x3，10x5，10x10，15x15，，20x15，20x20，
Size	Ф15,Ф20，Ф1″，Ф2″,Ф2.6″
Thickness	0.5mm，1.0mm
Polishing	Single or double
Crystal Orientation	＜001＞
redirection precision	±0.5°
Redirection the edge:	2°（special in 1°）
Angle of crystalline	Special size and orientation are available upon request
Ra:	≤5Å（5µm×5µm）
Pack	100 clean bag，1000 exactly clean bag

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