Descriptions:
Ti:Sapphire Crystal Titanium Doped Sapphire is the most widely used tunable solid-state laser material. Its lasing bandwidth can support
pulses < 10fs making it the crystal of choice for femtosecond mode-locked
oscillators and amplifiers. The
absorption band of Ti:Sapphire centers at ~ 490 nm so it may be conveniently
pumped by various laser sources such as argon ion lasers or frequency doubled
Nd:YAG, Nd:YLF, Nd:YVO4 lasers at ~530nm.
Applications:
1)
Femtosecond Pulse Laser Material.
2)
Tunable Output - 650 nm to 1100 nm.
3)
Excellent Output Efficiency
4)
Doubling by NLO crystals such as BBO in an
ultra-thin, Ti:Sapphire can be used to generate UV and DUV (up to 193 nm )
laser with ultrafast pulses below 10fs.
5)
Ti:Sapphire is also widely used as the pump source
of OPOs to expand the tunable range.
Optical and
spectral properties of Tisapphire
|
Absorption range
|
400 - 600 nm
|
|
Tuning range
|
660 - 1050 nm
|
|
Emission peak
|
795 nm
|
|
Absorption peak
|
488 nm
|
|
Absorption cross-section at peak wavelength
|
38×10-20 cm2
|
|
Emission Cross-section
|
Σ532nm = 4.9 x 10-20 cm2
|
|
Emission Cross-section
|
Σ490nm = 6.4 x 10-20 cm2
|
|
Emission cross-section
|
Σ790nm = 41×10-20 cm2
|
|
dn/dT
|
13×10-6 K-1
|
|
Thermal conductivity
|
33 Wm-1K-1
|
|
Laser action
|
4-level vibronic
|
|
Fluorescence lifetime
|
3.2 µs (T=300K)
|
|
Refractive index
|
1.76 @ 800 nm
|
|
Chemical formula
|
Ti3+:Al2O3
|
|
Crystal structure
|
Hexagonal a=4.758, c=12.991
|
|
Density
|
3.98 g/cm3
|
|
Melting point
|
2040℃
|
|
Mohs hardness
|
9
|
HGO offers Tisapphire
specifications:
|
Orientation:
|
Optical axis C normal to rod axis
|
|
Ti2O3 concentration:
|
0.03 - 0.25wt %
|
|
Figure Of Merit (FOM):
|
100~250 Upon customers request
|
|
End configurations:
|
Flat/Flat or Brewster/Brewster ends
|
|
Flatness:
|
l /8 ~1/10@ 633 nm
|
|
Parallelism:
|
10 arc sec
|
|
Surface finishing:
|
10/5 scratch/dig to MIL-O-13830A
|
|
Clear Aperture:
|
> 90%
|
|
Chamfer:
|
< 0.1 mm @ 45deg.
|
|
Size
|
Upon customer request
|
|
Coating
|
AR/HR coating upon customer’s request
|
|
Damage Threshold
|
750MW/CM2 at 1064nm, TEM00, 10ns, 10Hz
|
|
Quality Warranty Period
|
One
year under proper use
|
Why
Choose HGO ?
HG
OPTRONICS.,INC. supplies very high
quality of Titanium doped sapphire laser crystals. Based on HGO’s high processing techniques, high
precision Ti-sapphire with high surface quality and as high as 1/10 flatness is
available. The crystals are available in sizes from 2mm to 60mm diameter
or diagonal dimension and with path length from 2mm to over 100mm long.
What is more, Tisapphire based diffusion bonding configurations are also
vailable to supply especially in the form of pure sapphire /Tisapphire
diffusion bonding.
