Descriptions:
HGO grows Tm:YLF crystal Thulium-doped Yttrium Lithium Fluoride. Tm:YLF is an important middle
infrared laser crystal. Conveniently pumped at
792nm, 1.9μm linearly polarized beam is output in a axis, and non-linearly
polarized beam is output in c axis.
Optical and
physical properties of Tm:YLF crystal
|
Absorption peak wavelength
|
792 nm
|
|
Absorption cross-section at peak
|
0,55 × 10-20 cm2
|
|
Absorption bandwidth at peak wavelength
|
16 nm
|
|
Laser wavelength
|
1900 nm
|
|
Lifetime of 3F4 energy level
|
16 ms
|
|
Emission cross-section@1900 nm
|
0,4 × 10-20 cm2
|
|
Refractive index @1064 nm
|
no=1,448, ne=1,470
|
|
dn/dT
|
π = 4.3 x 10-6 x °K-1; σ = 2.0 x 10-6 x °K-1
|
|
Thermal expansion coefficient（10-6·K-1@25°C ）
|
10.1×10-6 (//c) K-1, 14.3×10-6((//a)
K-1
|
|
Thermal Conductivity /(W·m-1·K-1)
|
6 Wm-1K-1
|
|
Crystal structure
|
tetragonal
|
|
Melting Point
|
819°C
|
|
Density
|
3.99 g/cm3
|
|
Mohs hardness
|
5
|
|
Shear Modulus /Gpa
|
85
|
|
Specific Heat
|
0.79 J/gK
|
|
Poisson Ratio
|
0.3
|
|
Typical doping level
|
2-4%
|
HGO offers Tm:YLF
specifications:
|
Doping(atm%):
|
2% ~ 12%
|
|
Orientation:
|
a-cut/c-cut crystalline direction
|
|
Wavefront Distortion:
|
λ/4per inch @ 632.8 nm
|
|
Dimension Tolerances：
|
+0.0/-0.05 mm , Length: ±0.1 mm
|
|
Surface Quality:
|
10/5 Scratch/Dig MIL-O-1380A
|
|
Parallelism:
|
< 10″
|
|
Perpendicularity:
|
< 5′
|
|
Clear Aperture:
|
> 90%
|
|
Surface Flatness:
|
< λ/10 @ 632.8 nm
|
|
Chamfer:
|
< 0.1 mm @ 45o
|
|
Barrel Finish
|
50-80 micro-inch (RMS) ,
|
|
Size
|
Upon customer request
|
|
Coating
|
AR/HR/PR coating upon customer’s request
|
|
Damage Threshold
|
750MW/CM2 at 1064nm, TEM00, 10ns, 10Hz
|
|
Quality Warranty Period
|
One
year under proper use
|
Other YLF-based Nd/Pr/Ho/Yb/Er/Ce YLF are
also available upon request.
Advantages:
1)
Linearly polarized output beam
2)
Little heat effect while lasering
3)
Effective cross relaxing of Tm ions
4)
High efficiency with LD pumping
5)
Low nonlinear refractive index
6)
Low thermo-optical constant
7)
Low polarization loss
8)
Long upper energy level fluorescence lifetime
9)
Small up-conversion effect
10) No absorption loss of sensitized ions
Why
Choose HGO ?
HG
OPTRONICS.,INC. grow YLF-based crystals in house using CZ growth
technology. The use of high quality starting materials for crystal growth,
whole boule interferometry, precise inspection of scattering particle in
crystal using He-Ne laser and delicated measurement of bulk losses using
spectrophotometer assures that each crystal will comply with customer’s specification and perform well.
And base on our diffusion bonding
technology various YLF-based configurations are availabl to supply.
