Winbond Serial NAND Flash for code storage nand flash semiconductor

Winbond provides a series of Serial NAND products compatible with SPI NOR interface, so that users do not need to continue to rack their brains over the selection of large-capacity memory. In the past, NOR Flash has a relatively good cost advantage in low-volume products, but NAND Flash is a more cost-competitive product in large-volume products.



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Advantages of Winbond Serial NAND:

Built ECC

Traditional NAND requires additional controller to manage, detect and correct some problems that NAND may encounter during operation, such as bad block management, ECC correction, etc. But winbond Serial NAND products built-in ECC (Error Correcting Code Error correction Code) function, but also provides a continuous good "block" (block) Serial NAND, these can let the user does not need additional controller, can easily enjoy the function brings the convenience and practicality.


Continuous Read

In a typical system startup, the code is stored in flash memory and then read out at startup so that the CPU can run faster in DRAM. This process is known as code mapping. One of the goals of system designers is to be able to read code from flash memory into DRAM more quickly. The unique "Continuous Read" function of huabang is one of the functions specially designed to make the code in NAND Read out in a faster way.

W25N04KV 

- 4Gb Serial NAND Flash Memory with uniform 2KB+64B page size and set Buffer Read Mode as default

Density 4Mb Status Under Development
Vcc 2.7V - 3.6V Mass Production 104MHz
Package WSON8 6x8, TFBGA24 6x8 Tempture Range -40℃ ~ 85℃
Feature List  PPage Read Time with ECC Enable: 50us
 Page Program Time: 250us(typ.)
 Block Erase Time: 2ms(typ.)
 Support OTP Memory Area

W25M02GV

- 2Gb Serial NAND Flash Memory with uniform 2KB+64B page size and set Buffer Read Mode as default

Density 2Gb Status Mass Production
Vcc 2.7V - 3.6V Mass Production 104MHz
Package WSON8 6x8, TFBGA24 6x8 Tempture Range -40℃ ~ 85℃ / -40℃ ~ 105℃
Feature List  PPage Read Time with ECC Enable: 50us
 Page Program Time: 250us(typ.)
 Block Erase Time: 2ms(typ.)
 Support OTP Memory Area

W25M02GW

- 2Gb Serial NAND Flash Memory with uniform 2KB+64B page size and set Buffer Read Mode as default

Density 2Gb Status Mass Production
Vcc 1.70V - 1.95V Mass Production 104MHz
Package WSON8 6x8, TFBGA24 6x8 Tempture Range -40℃ ~ 85℃
Feature List  PPage Read Time with ECC Enable: 50us
 Page Program Time: 250us(typ.)
 Block Erase Time: 2ms(typ.)
 Support OTP Memory Area

W25N02KV 

- 2Gb Serial NAND Flash Memory with uniform 2KB+64B page size and set Buffer Read Mode as default

Density 2Gb Status Under Development
Vcc 2.7V - 3.6V Mass Production 104MHz
Package WSON8 6x8, TFBGA24 6x8 Tempture Range -40℃ ~ 85℃
Feature List  PPage Read Time with ECC Enable: 50us
 Page Program Time: 250us(typ.)
 Block Erase Time: 2ms(typ.)
 Support OTP Memory Area

W25N01GV

- 1Gb Serial NAND Flash Memory with uniform 2KB+64B page size and set Buffer Read Mode as default

Density 1Gb Status Mass Production
Vcc 2.7V - 3.6V Mass Production 104MHz
Package WSON8 6x8, TFBGA24 6x8 Tempture Range -40℃ ~ 85℃ / -40℃ ~ 105℃
Feature List  PPage Read Time with ECC Enable: 50us
 Page Program Time: 250us(typ.)
 Block Erase Time: 2ms(typ.)
 Support OTP Memory Area

W25N01GW

- 1Gb Serial NAND Flash Memory with uniform 2KB+64B page size and set Buffer Read Mode as default

Density 1Gb Status Mass Production
Vcc 1.70V - 1.95V Mass Production 104MHz
Package WSON8 6x8, TFBGA24 6x8 Tempture Range -40℃ ~ 85℃ / -40℃ ~ 105℃
Feature List  PPage Read Time with ECC Enable: 50us
 Page Program Time: 250us(typ.)
 Block Erase Time: 2ms(typ.)
 Support OTP Memory Area

W25N512GV

- 512Mb Serial NAND Flash Memory with uniform 2KB+64B page size and set Buffer Read Mode as default

Density 512Mbb Status Mass Production
Vcc 2.7V - 3.6V Mass Production 104MHz
Package WSON8 6x8, WSON8 5x6, TFBGA24 6x8 Tempture Range -40℃ ~ 85℃ / -40℃ ~ 105℃
Feature List  PPage Read Time with ECC Enable: 50us
 Page Program Time: 250us(typ.)
 Block Erase Time: 2ms(typ.)
 Support OTP Memory Area

W25N512GW

- 512Mb Serial NAND Flash Memory with uniform 2KB+64B page size and set Buffer Read Mode as default

Density 512Mbb Status Mass Production
Vcc 1.70V - 1.95V Mass Production 104MHz
Package WSON8 6x8, WSON8 5x6, TFBGA24 6x8 Tempture Range -40℃ ~ 85℃ / -40℃ ~ 105℃
Feature List  PPage Read Time with ECC Enable: 50us
 Page Program Time: 250us(typ.)
 Block Erase Time: 2ms(typ.)
 Support OTP Memory Area



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